Filtros : "Burgi, Juan" Limpar

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  • Source: Journal of Physical Chemistry B. Unidade: IF

    Subjects: DIFRAÇÃO POR RAIOS X, RADIAÇÃO SINCROTRON

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    • ABNT

      GARCÍA MOLLEJA, J et al. Synchrotron radiation applied to real-time studies of the kinetics of growth of aluminum nitride thin multilayers. Journal of Physical Chemistry B, v. 123, n. 7, p. 1679−1687, 2019Tradução . . Disponível em: https://doi.org/10.1021/acs.jpcb.8b09496. Acesso em: 28 abr. 2024.
    • APA

      García Molleja, J., Burgi, J., Kellermann, G., Craievich, A. F., Neuenschwander, R., Jouan, P. Y., et al. (2019). Synchrotron radiation applied to real-time studies of the kinetics of growth of aluminum nitride thin multilayers. Journal of Physical Chemistry B, 123( 7), 1679−1687. doi:10.1021/acs.jpcb.8b09496
    • NLM

      García Molleja J, Burgi J, Kellermann G, Craievich AF, Neuenschwander R, Jouan PY, Djouadi MA, Piccoli M, Bemporad E, Felicis D de, Feugeas J N. Synchrotron radiation applied to real-time studies of the kinetics of growth of aluminum nitride thin multilayers [Internet]. Journal of Physical Chemistry B. 2019 ; 123( 7): 1679−1687.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1021/acs.jpcb.8b09496
    • Vancouver

      García Molleja J, Burgi J, Kellermann G, Craievich AF, Neuenschwander R, Jouan PY, Djouadi MA, Piccoli M, Bemporad E, Felicis D de, Feugeas J N. Synchrotron radiation applied to real-time studies of the kinetics of growth of aluminum nitride thin multilayers [Internet]. Journal of Physical Chemistry B. 2019 ; 123( 7): 1679−1687.[citado 2024 abr. 28 ] Available from: https://doi.org/10.1021/acs.jpcb.8b09496
  • Source: EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS. Unidade: IF

    Subjects: RAIOS X, SILÍCIO

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    • ABNT

      BURGI, Juan et al. (1011) preferential orientation of polycrystalline 'AL''N' grown on 'SI''O' IND. 2'/'SI' wafers by reactive sputter magnetron technique. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, v. 74, n. 1, p. 10301, 2016Tradução . . Disponível em: http://www.epjap.org/articles/epjap/abs/2016/04/ap150446/ap150446.html. Acesso em: 28 abr. 2024.
    • APA

      Burgi, J., Garcia Molleja, J., Bolmaro, R., Piccoli, M., Bemporad, E., Feugeas, J., & Craievich, A. F. (2016). (1011) preferential orientation of polycrystalline 'AL''N' grown on 'SI''O' IND. 2'/'SI' wafers by reactive sputter magnetron technique. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 74( 1), 10301. doi:10.1051/epjap/2016150446
    • NLM

      Burgi J, Garcia Molleja J, Bolmaro R, Piccoli M, Bemporad E, Feugeas J, Craievich AF. (1011) preferential orientation of polycrystalline 'AL''N' grown on 'SI''O' IND. 2'/'SI' wafers by reactive sputter magnetron technique [Internet]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS. 2016 ; 74( 1): 10301.[citado 2024 abr. 28 ] Available from: http://www.epjap.org/articles/epjap/abs/2016/04/ap150446/ap150446.html
    • Vancouver

      Burgi J, Garcia Molleja J, Bolmaro R, Piccoli M, Bemporad E, Feugeas J, Craievich AF. (1011) preferential orientation of polycrystalline 'AL''N' grown on 'SI''O' IND. 2'/'SI' wafers by reactive sputter magnetron technique [Internet]. EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS. 2016 ; 74( 1): 10301.[citado 2024 abr. 28 ] Available from: http://www.epjap.org/articles/epjap/abs/2016/04/ap150446/ap150446.html

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